Agne Ramanaviciute

PhD Student, c2025

Department of Materials Science and Metallurgy
Computational Materials Science
100%
Resistive Random Access Memory (ReRAM)
100%
Neuromorphic Computing
100%

I am a PhD student in the NanoDTC programme at the University of Cambridge. Before starting my PhD, I completed a BSc in Physics at The University of Manchester and an MPhil in Scientific Computing at Cambridge. Alongside my computational work, I also have a strong hands-on experimental background working with 2D nanomaterials like MXenes, graphene, and reduced graphene oxide (rGO).

Currently, my research uses computational modelling to figure out exactly how HfO2-based Resistive RAM (ReRAM) memory devices work at the atomic level.

Ultimately, my goal is to bridge the gap between quantum-level simulations and real-world device fabrication. Beyond the fundamental physics, I am passionate about deep tech commercialisation. My focus is taking novel materials science out of the lab to build the next generation of energy-efficient consumer electronics.

PhD supervisors: Markus Hellenbrand, Abin Varghese, Prof. Bartomeu Monserrat

External Supervisor: Prof. Alexander Shluger (UCL)

Research topic: Computational Modelling of HfO2-based Systems for Next-Generation Resistive Memory Devices